wurtzite造句

• Fe - sem , edx and xrd indicated that the low - dimensional nanomaterials were wurtzite gan
  Fe - sem ， edx和xrd表明三种低维纳米结构均为纤维锌矿gan 。
• The result of the xrd indicated that the production structure was wurtzite , which was mixed with hydrocarbon
  射线衍射结果表明，掺入了碳氢化合物的反应产物的晶须属六方纤锌矿结构。
• Zinc oxide is a ii - vi wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure
  氧化锌( zno )是一种具有六方结构的?族宽带隙半导体材料，室温下带隙宽度高达3 . 3ev 。
• Zinc oxide is a ii - iv wide band - gap ( 3 . 37ev ) compound semiconductor with wurtzite crystal structure
  氧化锌( zno )是一种具有六方结构的的宽禁带-族半导体材料，室温下能带带隙eg为3 . 37ev 。
• Zinc oxide is a ii - iv wide band - gap ( eg = 3 . 37ev ) compound semiconductor with wurtzite crystal structure
  六角纤锌矿结构的氧化锌是一种重要的宽带隙-族半导体材料，室温下带隙为3 . 37ev 。
• Xrd spectra show that the bulk gan particles are wurtzite structure , and the nc gan has small domain size and the structure of solid solution phase
  Xrd结果显示经由气凝法合成前后氮化镓均为一六方晶系结构，利用块状氮化镓生成的奈米粉体粒径微细且是一种固溶相结构。
• Zinc oxide as a wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure , is gaining importance for the possible application as a semiconductor laser , due to its ultraviolet emission at room temperature
  宽禁带zno半导体为直接带隙材料，具有六方结构，较高的激子束缚能( 60mev ) ，室温下带隙宽度为3 . 3ev 。
• When x 0 . 36 , the alloy thin films keep the wurtzite structure . and the band gap could be varied from 3 . 40 ev to 3 . 93 ev . the mg0 . 05zn0 . 95o and mg0 . 15zn0 . 85o alloys with wurtzite structure show high thermal stability up to 1000
  研究表明当x的取值小于等于0 . 36时，合金薄膜会保持zno六角形纤锌矿结构，此时薄膜的能隙宽度可以在3 . 4ev到3 . 93ev之间调节。
• The x - ray diffraction patterns and raman spectra indicated that zns fully transformed into zno with a polycrystalline hexagonal wurtzite structure when zns thin films were oxidized at annealing temperature of above 700 oc in an oxygen ambient
  X射线衍射（ xrd ）和拉曼实验结果表明硫化锌（ zns ）薄膜在高于700oc热氧化处理后，硫化锌（ zns ）全部转化为氧化锌（ zno ） ，且是六角纤锌矿的多晶薄膜。
• Fe - sem , edx , xrd , saed and hrtem indicated that the regular arrays nanorods were wurtzite single crystal gan and the nanorods were tapered from the base to their upper end , which compatible with the theoretical result
  Fe - sem ， edx ， xrd ， saed和hrtem结果表明：规则排列的纳米棒是具有六方晶系纤锌矿结构的gan单晶体，并且从西北工业大学博士学位论文底部到顶部具有塔形形貌，这一现象与理论推导结果一致。
• Zno is a ii - vi semiconductor material with wide band - gap , which has hexagonal wurtzite structure . zno thin films were widely applied in solar cell , uv detector , saw device , gas sensor and transparent electrodes et al for their excellent properties
  氧化锌( zno )是一种具有六方纤锌矿晶体结构的宽禁带ii - vi族半导体材料,由于其优良的特性,在太阳能电池、紫外探测器、声表面波器件、气敏传感器、透明电极等方面得到了广泛的应用。
• Aln is an important compound semiconductor material with wide band - gap , which has wurtzite structure too . because of their many excellent physical properties , aln thin films were applied in blue - uv emitting materials , epitaxy buffer layer , soi material and saw device with ghz band
  Aln具有许多优异的物理性能，在蓝光、紫外发光材料及热释电材料、外延过渡层、 soi材料的绝缘埋层和ghz级声表面波器件等方面有着重要的应用。
• Zno is a - semiconductor material with wide band - gap , which has hexagonal wurtzite structure . zno thin films were widely applied in solar cell , uv detector , lighting displayer , saw device , gas sensor et al for their excellent physical properties
  氧化锌( zno )是一种具有六方纤锌矿晶体结构的宽禁带-族半导体材料，由于其优良的物理特性， zno薄膜在太阳能电池、紫外探测器、发光显示器件、声表面波器件、气敏传感器等方面得到了广泛的应用。
• X - ray diffraction ( xrd ) , uv - vis absorption spectroscopy and photoluminescence spectroscopy ( pl ) were employed to study the structural and optical properties of mgxzn1 - xo alloy thin films . the experimental results show that the films were hexagonal wurtzite structure and the band - gap of mgxzn1 - xo alloy thin films gradually increased with increasing mg content . the quality of mgxzn1 - xo alloy thin films can be greatly improved by means of annealing in oxygen ambient
  实验结果表明，利用溶胶-凝胶法制备的mg _ xzn _ ( 1 - x ) o纳米薄膜为六角纤锌矿结构，粒径为3 5nm ，随着mg含量的增加带隙变宽；通过在氧气气氛下退火处理后， mg _ xzn _ ( 1 - x ) o纳米薄膜表现出了较好的结构和发光特性，表明热处理可提高薄膜质量。
• Various chemical strategies have been introduced to the system to affect the dynamics of reaction , and thus , to adjust the nucleation and growth process . by using appropriate complexing agents as controlling reagents and adjusting the reaction temperature , both morphologies ( nanorods and fractals ) and structural phases ( zinc blende or wurtzite structures ) of cdse nanocrystals can be easily controlled . a precipitate slow - release controlled method was designed in the synthesis of manganese selenides
  在化学调控合成思想的指导下，运用已取得的调控合成的成功经验，利用mnseo3沉淀缓释放出mn2 +源和硒源，在调节反应温度的基础上，于同一反应体系成功地合成了mnse2和mnse的立方体和球形微米晶，实现了产物组成和维度的调控，并对它们的磁行为进行了研究。
• Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis . a unique method for cleaning and drying of substrate - cleaning used by scour , drying used by infrared light was fished out by large numbers of experiment . chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time . by the measurements of sem , xrd and uvs , the thin film was analysed . the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous , dense and crackfree was the crystalline phase of hexagonal wurtzite . the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm . the average transmittance of thin film in visible region was above 90 % . the results of measurements else also proved that the thickness of single dip - coating was 75 240nm , this films resistivity was found to be 3 . 105 102 3 . 96 105 ? cm . the thickness and resistivity of thin film influenced by dope - content , withdrawal speed , pre - heat - treatment , anealing were reseached respectively
  利用xrd 、 sem以及uvs光谱仪等分析方法对薄膜进行了研究，结果显示，所制备的薄膜为六方纤锌矿型结构，具有高c轴择优取向性；表面均匀、致密，薄膜材料由许多星状晶粒组成，晶粒尺寸大约为10 - 30nm左右；薄膜可见光透过率平均可达90 % ；对薄膜厚度以及电学性能进行了测定后发现：单次镀膜厚度约为75 - 240nm ， al ~ ( 3 + )离子掺杂型氧化锌薄膜的电阻率在3 . 015 102 - 3 . 96 103 ? cm范围内；分别研究了掺杂浓度、提拉速度、预烧温度、退火温度等工艺参数对薄膜厚度和电阻率的影响。
• However , it is not easy to incorporate large n concentration in gap due to the large differences in lattice structure ( gan belongs to wurtzite structure while gap zinc blende structure ) and in lattice constant ( ~ 20 % ) between gan and gap , which will lead to an extremely large miscibility gap
  然而要在gap中实现高浓度的掺氮并不容易。这主要是由于gap和gan之间较大的物理特性的差异，特别是晶格结构和晶格常数的差异，使得gap和gan存在较大的可混溶性间隙，从而难以生长高质量的高掺氮的gap材料。
• Zinc oxide ( zno ) is a wide band gap ( 3 . 4ev ) semiconductor with the hexagonal crystal structure ( wurtzite type ) . zno thin films with the c - axis orientation perpendicular to the substrate show excellent piezo - electrical properties and are widely used in piezo - electrical filed . and the dense anjd uniform surface of the films is required when zno thin films are used as integrated functional films
  Zno属于六方晶系6mm点群，晶体在c轴垂直面上的电性和弹性都是对称的，因而c轴择优取向的多晶薄膜能够具有单晶那样的压电性和光电性质，而具有平整均匀的表面形貌则是zno薄膜作为一种集成功能薄膜应用性能的保证。