wurtzites造句

• Fe-sem, edx and xrd indicated that the low-dimensional nanomaterials were wurtzite gan
  fe-sem，edx和xrd表明三种低维纳米结构均为纤维锌矿gan。
• The result of the xrd indicated that the production structure was wurtzite, which was mixed with hydrocarbon
  射线衍射结果表明，掺入了碳氢化合物的反应产物的晶须属六方纤锌矿结构。
• Zinc oxide is a ii-vi wide band-gap ( 3.3ev ) compound semiconductor with wurtzite crystal structure
  氧化锌(zno)是一种具有六方结构的?族宽带隙半导体材料，室温下带隙宽度高达3.3ev。
• Zinc oxide is a ii-iv wide band-gap ( 3.37ev ) compound semiconductor with wurtzite crystal structure
  氧化锌(zno)是一种具有六方结构的的宽禁带-族半导体材料，室温下能带带隙eg为3.37ev。
• Zinc oxide is a ii-iv wide band-gap ( eg = 3.37ev ) compound semiconductor with wurtzite crystal structure
  六角纤锌矿结构的氧化锌是一种重要的宽带隙-族半导体材料，室温下带隙为3.37ev。
• Xrd spectra show that the bulk gan particles are wurtzite structure, and the nc gan has small domain size and the structure of solid solution phase
  xrd结果显示经由气凝法合成前后氮化镓均为一六方晶系结构，利用块状氮化镓生成的奈米粉体粒径微细且是一种固溶相结构。
• Zinc oxide as a wide band-gap ( 3.3ev ) compound semiconductor with wurtzite crystal structure, is gaining importance for the possible application as a semiconductor laser, due to its ultraviolet emission at room temperature
  宽禁带zno半导体为直接带隙材料，具有六方结构，较高的激子束缚能(60mev)，室温下带隙宽度为3.3ev。
• When x 0.36, the alloy thin films keep the wurtzite structure . and the band gap could be varied from 3.40 ev to 3.93 ev . the mg0.05zn0.95o and mg0.15zn0.85o alloys with wurtzite structure show high thermal stability up to 1000
  研究表明当x的取值小于等于0.36时，合金薄膜会保持zno六角形纤锌矿结构，此时薄膜的能隙宽度可以在3.4ev到3.93ev之间调节。
• When x 0.36, the alloy thin films keep the wurtzite structure . and the band gap could be varied from 3.40 ev to 3.93 ev . the mg0.05zn0.95o and mg0.15zn0.85o alloys with wurtzite structure show high thermal stability up to 1000
  研究表明当x的取值小于等于0.36时，合金薄膜会保持zno六角形纤锌矿结构，此时薄膜的能隙宽度可以在3.4ev到3.93ev之间调节。
• The x-ray diffraction patterns and raman spectra indicated that zns fully transformed into zno with a polycrystalline hexagonal wurtzite structure when zns thin films were oxidized at annealing temperature of above 700 oc in an oxygen ambient
  x射线衍射（xrd）和拉曼实验结果表明硫化锌（zns）薄膜在高于700oc热氧化处理后，硫化锌（zns）全部转化为氧化锌（zno），且是六角纤锌矿的多晶薄膜。
• Fe-sem, edx, xrd, saed and hrtem indicated that the regular arrays nanorods were wurtzite single crystal gan and the nanorods were tapered from the base to their upper end, which compatible with the theoretical result
  fe-sem，edx，xrd，saed和hrtem结果表明：规则排列的纳米棒是具有六方晶系纤锌矿结构的gan单晶体，并且从西北工业大学博士学位论文底部到顶部具有塔形形貌，这一现象与理论推导结果一致。
• Zno is a ii-vi semiconductor material with wide band-gap, which has hexagonal wurtzite structure . zno thin films were widely applied in solar cell, uv detector, saw device, gas sensor and transparent electrodes et al for their excellent properties
  氧化锌(zno)是一种具有六方纤锌矿晶体结构的宽禁带ii-vi族半导体材料,由于其优良的特性,在太阳能电池、紫外探测器、声表面波器件、气敏传感器、透明电极等方面得到了广泛的应用。
• Aln is an important compound semiconductor material with wide band-gap, which has wurtzite structure too . because of their many excellent physical properties, aln thin films were applied in blue-uv emitting materials, epitaxy buffer layer, soi material and saw device with ghz band
  aln具有许多优异的物理性能，在蓝光、紫外发光材料及热释电材料、外延过渡层、soi材料的绝缘埋层和ghz级声表面波器件等方面有着重要的应用。
• Zno is a-semiconductor material with wide band-gap, which has hexagonal wurtzite structure . zno thin films were widely applied in solar cell, uv detector, lighting displayer, saw device, gas sensor et al for their excellent physical properties
  氧化锌(zno)是一种具有六方纤锌矿晶体结构的宽禁带-族半导体材料，由于其优良的物理特性，zno薄膜在太阳能电池、紫外探测器、发光显示器件、声表面波器件、气敏传感器等方面得到了广泛的应用。
• X-ray diffraction ( xrd ), uv-vis absorption spectroscopy and photoluminescence spectroscopy ( pl ) were employed to study the structural and optical properties of mgxzn1-xo alloy thin films . the experimental results show that the films were hexagonal wurtzite structure and the band-gap of mgxzn1-xo alloy thin films gradually increased with increasing mg content . the quality of mgxzn1-xo alloy thin films can be greatly improved by means of annealing in oxygen ambient
  实验结果表明，利用溶胶-凝胶法制备的mg_xzn_(1-x)o纳米薄膜为六角纤锌矿结构，粒径为35nm，随着mg含量的增加带隙变宽；通过在氧气气氛下退火处理后，mg_xzn_(1-x)o纳米薄膜表现出了较好的结构和发光特性，表明热处理可提高薄膜质量。
• Various chemical strategies have been introduced to the system to affect the dynamics of reaction, and thus, to adjust the nucleation and growth process . by using appropriate complexing agents as controlling reagents and adjusting the reaction temperature, both morphologies ( nanorods and fractals ) and structural phases ( zinc blende or wurtzite structures ) of cdse nanocrystals can be easily controlled . a precipitate slow-release controlled method was designed in the synthesis of manganese selenides
  在化学调控合成思想的指导下，运用已取得的调控合成的成功经验，利用mnseo3沉淀缓释放出mn2+源和硒源，在调节反应温度的基础上，于同一反应体系成功地合成了mnse2和mnse的立方体和球形微米晶，实现了产物组成和维度的调控，并对它们的磁行为进行了研究。
• Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis . a unique method for cleaning and drying of substrate-cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment . chemical mechnism of zno thin film prepared by sol-gel technique was discussed by dta for the first time . by the measurements of sem, xrd and uvs, the thin film was analysed . the result proved that the thin film with strongly preferred orientation of c-axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite . the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm . the average transmittance of thin film in visible region was above 90 % . the results of measurements else also proved that the thickness of single dip-coating was 75 240nm, this films resistivity was found to be 3.105 102 3.96 105 ? cm . the thickness and resistivity of thin film influenced by dope-content, withdrawal speed, pre-heat-treatment, anealing were reseached respectively
  利用xrd、sem以及uvs光谱仪等分析方法对薄膜进行了研究，结果显示，所制备的薄膜为六方纤锌矿型结构，具有高c轴择优取向性；表面均匀、致密，薄膜材料由许多星状晶粒组成，晶粒尺寸大约为10-30nm左右；薄膜可见光透过率平均可达90%；对薄膜厚度以及电学性能进行了测定后发现：单次镀膜厚度约为75-240nm，al~(3+)离子掺杂型氧化锌薄膜的电阻率在3.015102-3.96103?cm范围内；分别研究了掺杂浓度、提拉速度、预烧温度、退火温度等工艺参数对薄膜厚度和电阻率的影响。
• However, it is not easy to incorporate large n concentration in gap due to the large differences in lattice structure ( gan belongs to wurtzite structure while gap zinc blende structure ) and in lattice constant ( ~ 20 % ) between gan and gap, which will lead to an extremely large miscibility gap
  然而要在gap中实现高浓度的掺氮并不容易。这主要是由于gap和gan之间较大的物理特性的差异，特别是晶格结构和晶格常数的差异，使得gap和gan存在较大的可混溶性间隙，从而难以生长高质量的高掺氮的gap材料。
• Zinc oxide ( zno ) is a wide band gap ( 3.4ev ) semiconductor with the hexagonal crystal structure ( wurtzite type ) . zno thin films with the c-axis orientation perpendicular to the substrate show excellent piezo-electrical properties and are widely used in piezo-electrical filed . and the dense anjd uniform surface of the films is required when zno thin films are used as integrated functional films
  zno属于六方晶系6mm点群，晶体在c轴垂直面上的电性和弹性都是对称的，因而c轴择优取向的多晶薄膜能够具有单晶那样的压电性和光电性质，而具有平整均匀的表面形貌则是zno薄膜作为一种集成功能薄膜应用性能的保证。