晶格失配的英文
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"晶格失配"怎么读用"晶格失配"造句
英文翻译手机版
- lattice mismatch
- "晶格"英文翻译 crystal lattice; lattice; sp ...
- "配"英文翻译 join in marriage
- "晶格失配位错" 英文翻译 : misfit dislocation
- "失配" 英文翻译 : maladjustment; misfit; mismatch; miss match; unbalance
- "晶格" 英文翻译 : [物理学] crystal lattice; [晶体学] lattice; space lattice; crystalline host lattice 面心晶格 face-centred lattice; 体心晶格 body-centred lattice; 晶格场 crystal field; 晶格放大 lattice amplification; 晶格结构 lattice structure; 晶格理论 lattice theory; 晶格象 lattice image
- "价格失调" 英文翻译 : inequality of price
- "人格失常" 英文翻译 : character disorder
- "负失配" 英文翻译 : negative mismatching; negativemismatching
- "声失配" 英文翻译 : acoustic mismatch
- "失配表" 英文翻译 : unmatched list
- "失配环" 英文翻译 : mismatched ring
- "失配键" 英文翻译 : unmatched key
- "失配角" 英文翻译 : displacement angle; displacementangle
- "失配树" 英文翻译 : none tree
- "失配线" 英文翻译 : none line
- "正失配" 英文翻译 : positive mismatching
- "人格障碍;人格失常" 英文翻译 : personality disorder
- "性格障碍 人格失常" 英文翻译 : characterdisorder
- "晶格,结晶格子" 英文翻译 : crystal lattice
- "子晶格;亚晶格" 英文翻译 : sublattice
- "比色失配" 英文翻译 : colorimetric mismatch
- "参数失配" 英文翻译 : parameter mismatch
- "垂直失配" 英文翻译 : vertical misalignment
- "端接失配" 英文翻译 : mistermination
- "反应性失配" 英文翻译 : reactivity mismatch
例句与用法
- Calculation of the lattice mismatch between semiconductor epitaxy and substrate
半导体外延层晶格失配度的计算 - The different definitions of lattice mismatch are compared with each other
摘要比较了晶格失配度的各种定义,建议统一使用同一定义。 - However , the simulation results of the superlattice with 4 % lattice mismatch show that the thermal conductivity increases monotonically with the period length
而对于具有4 %晶格失配的超晶格模拟结果却表明,超晶格导热系数随周期长度的增大而单调上升。 - These results indicate that lattice mismatch is the main reason why minimum thermal conductivity has not been observed in a large number of experimental studies
这一研究结果表明,材料的晶格失配是大多数实验研究中没有发现超晶格最小导热系数的主要原因。 - In the end thin film ybig was grown onto substrate ybilg . then the structure and component of these films were measured and anaslysed by the measurements such as xrd , sem , epma , etc
Ybiig 、 ybig系列石榴石薄膜的生长、测试结果表明,晶格失配度对lpe外延成功与否起重要作用。 - This kind of technology provides an effective way to solve a troublesome lattice mismatch problem in the heteroepitaxy , which has the capability for improving device structure and characteristics
这种技术解决了外延生长难以解决的晶格失配问题,为改善器件结构及性能提供了巨大的潜力。 - The xrd results show that the sputtered lcmo film grains are grown epitaxially , when the lattice mismatch between film and substrate is small . the lcmo thin films grown on sto substrates show an in - plane tensile stress
Xrd的研究结果表明,当基片与lcmo薄膜间的晶格失配度较小时,薄膜和基片具有一致的晶格取向,薄膜具有较好的外延结构特征。 - In order to deal with large mismatch ( 14 . 6 % at room temperature ) between gaas and insb , a insb buffer layer was deposited firstly at low temperature 350 , followed by a insb epilayer being deposited at higher temperature 440
为了克服insb与gaas间14 . 6 %的晶格失配度,实验设计先低温生长一定厚度的insb缓冲层,随后升温生长insb外延层。 - As well , the compress stress existed in ( 002 ) crystal plane are found and can be explained by the matching between film material and substrate material as well as the different thermal expand coefficient between them
同时, zno薄膜( 002 )方向上存在着内应力,内应力是由膜材料与基底材料之间的晶格失配和不同热扩散系数造成的,退火可可使内应力的到不同程度的释放。 - And , the sbn films were found more and more ( 001 ) preferential orientated with the increasement of film thickness and it was attributed to the lower layer acting as the buffer one to improve the lattice mismatch between the sbn film and the substrate
而且,随着膜厚的增加,处于底层的膜层起到缓冲层的作用,逐渐改善着薄膜与衬底之间的晶格失配,从而使得sbn薄膜在( 001 )方向的优先取向性越来越好。
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