电子漂移的英文

• electromigration
• electron drift
• electronic drift

• "电子"英文翻译    electron
• "漂移"英文翻译    be driven by the current; dr ...
• "电子漂移速度" 英文翻译 :    electron drift velocity
• "单电路电子漂移管" 英文翻译 :    single circuit drift tube
• "电子漂移检测器" 英文翻译 :    electron drift detector
• "电子漂移检测仪" 英文翻译 :    electron drift detector
• "电子漂移速度检测器" 英文翻译 :    electron drift velocity detector
• "离子漂移" 英文翻译 :    ion drift
• "离子漂移法" 英文翻译 :    ion drift technique
• "粒子漂移" 英文翻译 :    particle drift
• "原子漂移速度" 英文翻译 :    atom drift velocity
• "载流子漂移速度" 英文翻译 :    carrier drift speed
• "载流子漂移型电晶体" 英文翻译 :    carrier drift type transistor
• "载流子漂移型晶体管" 英文翻译 :    carrier drift transistor; drift transistor
• "漂移型电晶体，载流子漂移型电晶体" 英文翻译 :    carrier drift type transistor
• "漂移电子" 英文翻译 :    wandering electron
• "漂移电子管" 英文翻译 :    drift tube
• "冷却锂离子漂移半导体探测器" 英文翻译 :    cooled lithium ion-drifted semiconductor detector
• "漂移" 英文翻译 :    1.(漂流移动) be driven by the current; drift about2.[电子学] drift; shift; shifting; shunt running; creeping; wander◇漂移浮标 drifting buoy; 漂移度 driftance; 漂移晶体管 drift transistor; 漂移力 drift force; 漂移率 drift rate; drift mobility; 漂移区 drift region; 漂移速度 drift velocity; 漂移误差 drift error
• "载流子漂" 英文翻译 :    carrier drift transistor
• "低漂移" 英文翻译 :    low drift
• "峰漂移" 英文翻译 :    peak shift
• "风漂移" 英文翻译 :    wind drift
• "氦漂移" 英文翻译 :    helium drift; heliumdrift
• "库漂移" 英文翻译 :    repertoire shift

• Algan / gan hemt has high breakdown electric field , fast electron drift velocity and large electron concentration , so it has been used more and more in high frequency and large power fields
  Algan / ganhemt由于具有击穿电压高、电子漂移速度快和电子浓度大等特点,已被越来越多地应用于高频及大功率领域。
• Silicon carbide is becoming the most promising semiconductor material for high temperature , high frequency and high power devices because of its superior properties such as wide band gap , high breakdown field , high electronics saturation drift velocity , and high thermal conductivity
  Sic材料由于具有宽禁带、高临界击穿电场、高饱和电子漂移速度、较大的热导率等优良特性，因此成为制作高温、高频、大功率器件的理想半导体材料。
• Elastic collision and inelastic collision are considered in oxygen molecule , nitrogen molecule by electron impart . the mail simulation results were as follow : ( 1 ) the variations of drift velocity and the average energy of electron with the e / n in o2 and n2 are obtained . the number of electrons for excitation , ionization , dissociation and dissociative ionization collision with the e / n and the energy of electron are analyzed emphatically
  考虑了各种弹性和非弹性碰撞过程，在纯氧气、纯氮气中，给出了不同简化场e n条件下的电子漂移速度和平均电子能量的变化；着重分析了激发、电离、分解及分解电离碰撞的粒子数随e n 、电子能量的变化，同时计算了激发发射光谱的波长。
• ( 2 ) the process of dc discharge in o2 / n2 mixtures with the different n2 concentration has been simulated . the dependences of number of collisions with the e / n and the energy of electron are given . it is analyzed stressfully that the process of electron - molecule collision with the e / n and the energy of electron in air at atmospheric pressure
  对于o _ 2 n _ 2混合气体，模拟了不同配比条件下直流放电过程，得出了发生碰撞的粒子数随e n 、电子能量的变化；着重分析了空气中激发、电离、分解及分解电离碰撞的粒子数随e n的变化，给出了电子漂移速度和平均电子能量随e n的变化。
• Characterized by wide band gap , high breakage electric field , high thermal conductivity , high saturated electron mobility , cubic silicon carbide ( 3c - sic ) , considered as one of the most promising wide band gap semiconductors , is widely utilized in high temperature , high frequency and large power semiconductor devices
  3c - sic被誉为最有潜力的宽禁带半导体材料,具有带隙宽、临界击穿电场高、热导率高、饱和电子漂移速度大等优点,是高温、高频、高功率半导体器件的首选材料。
• This work was supported by the state science and technology ministry of p . r . china under the contact no . g20000683 - 06 , and by the national natural science foundation of p . r . china under grant no . 60046001 . gallium nitride is one of the 3rd generation semiconductor materials . from 1990 ' s , gan has attracted more and more attention and advanced rapidly , mainly due to its direct transition , wide band gap ( ~ 3 . 4ev ) and other excellent characters
  Gan是直接跃迁的宽带隙材料，具有禁带宽度大( 3 . 4ev ，远大于si的1 . 12ev ，也大于sic的3 . 0ev ) ，电子漂移饱和速度高，介电常数小，导热性能好等特点，在光电子器件和电子器件领域有着广泛的应用前景。