耗尽效应的英文

• depletion effect

• "耗尽"英文翻译    exhaust; use up; deplete; ex ...
• "效应"英文翻译    effect; action; influence
• "耗尽层展宽效应" 英文翻译 :    depletion layer widening effect
• "耗尽型场效应管" 英文翻译 :    depletion field effect transistor
• "耗尽" 英文翻译 :    exhaust; use up; deplete; exhaustion; depletion; consumption; burning up; impoverishment 耗尽体力 use up all one's strength; 耗尽心血 exhaust all one's energies; 这场长期的消耗战耗尽了两国的力量。the long war of attrition exhausted the strength of both countries
• "耗尽模式场效应电晶体" 英文翻译 :    depletion mode field effect transistor
• "耗尽型场效应晶体管" 英文翻译 :    dependent mode field effect transistor; depletion mode fet; depletion mode field effect transistor; depletion type fet; dfet; normally on fet
• "耗尽型肖特基场效应晶体管" 英文翻译 :    depletion metal schottky fet; dmes fet
• "吃光；耗尽" 英文翻译 :    eat up
• "倒空，耗尽" 英文翻译 :    deplete
• "耗尽；用完" 英文翻译 :    drain...of
• "耗尽层" 英文翻译 :    depletion layer; exhaustion layer
• "耗尽带" 英文翻译 :    depletion zone
• "耗尽的" 英文翻译 :    emptied; extinct; outspent; outworn; worn-out
• "耗尽地" 英文翻译 :    exhausted
• "耗尽端" 英文翻译 :    exhaustion end point
• "耗尽法" 英文翻译 :    exhaustion method
• "耗尽级" 英文翻译 :    expended step
• "耗尽区" 英文翻译 :    depletion mode region; depletion region; exhaustion region
• "耗尽型" 英文翻译 :    d most; depletion mode; depletion most; depletion type
• "将耗尽" 英文翻译 :    run short
• "滥获；耗尽" 英文翻译 :    depletion
• "弄空, 耗尽" 英文翻译 :    deplete of
• "疲乏,耗尽" 英文翻译 :    wear (oneself) out
• "炭耗尽" 英文翻译 :    carbon exhaustion

• Abstract : a new approach , gate - capacitance - shift ( gcs ) approach , is described for compact modeling . this approach is piecewise for various physical effects and comprises the gate - bias - dependent nature of corrections in the nanoscale regime . additionally , an approximate - analytical solution to the quantum mechanical ( qm ) effects in polysilicon ( poly ) - gates is obtained based on the density gradient model . it is then combined with the gcs approach to develop a compact model for these effects . the model results tally well with numerical simulation . both the model results and simulation results indicate that the qm effects in poly - gates of nanoscale mosfets are non - negligible and have an opposite influence on the device characteristics as the poly - depletion ( pd ) effects do
  文摘:提出了一种新的建立集约模型的方法,即栅电容修正法.此方法考虑了新型效应对栅电压的依赖关系,且可以对各种效应相对独立地建模并分别嵌入模型中.另外,利用该方法和密度梯度模型建立了一个多晶区内量子效应的集约模型.该模型与数值模拟结果吻合.模型结果和模拟结果均表明,多晶区内的量子效应不可忽略,且它对器件特性的影响与多晶耗尽效应相反