间隙位置的英文

• intersite
• interstitial position
• interstitial sites

• "间隙"英文翻译    interval; gap; freedom; spac ...
• "位置"英文翻译    seat; place; location; site
• "填隙位置；间隙位置" 英文翻译 :    interstitial position
• "晶格间隙位置" 英文翻译 :    interstitial lattice site
• "晶格原子间隙位置" 英文翻译 :    interstitial lattice site
• "间隙位" 英文翻译 :    gap digit
• "格隙位置" 英文翻译 :    interstitial site
• "晶隙位置" 英文翻译 :    interstitial site
• "输出杆间隙位移" 英文翻译 :    output stem travel clearance
• "裂隙位移" 英文翻译 :    fissure displacement
• "间隙" 英文翻译 :    (空隙) interval; gap; freedom; space; [机械工程] clearance; separation; stricture; clear; interspace; allowance; play; backlash; bottom clearance; cross gap; free distance; gapping place; spatium; yawn; [物理学] interstice 齿轮间隙 gear clearance; 利用工作间隙学习 study in the intervals of one's work; 两场战争的间隙 an interval between two wars; 在行与行之间要留出间隙, 以便作必要的修改。 please leave a space between the lines for the necessary corrections
• "位置" 英文翻译 :    1.(所在或占的地方) seat; place; location; site 大家都按指定的位置坐了下来。 everybody took their places.2.(地位) place; position 她曾是个在政府中占有重要位置的女人。 she was a woman of high position in the government.3.[航] position
• "disse间隙" 英文翻译 :    space of disse
• "mall间隙" 英文翻译 :    space of mall
• "胞间隙" 英文翻译 :    intercellular space; interstitial space
• "层间隙" 英文翻译 :    lamellar spacing
• "齿间隙" 英文翻译 :    interdentium
• "唇间隙" 英文翻译 :    interlabial gap
• "带间隙" 英文翻译 :    band gap
• "端间隙" 英文翻译 :    endplay; splaying
• "阀间隙" 英文翻译 :    valve clearance
• "沟间隙" 英文翻译 :    arc trench gap
• "骨间隙" 英文翻译 :    spatium interosseum
• "管间隙" 英文翻译 :    ligament
• "后间隙" 英文翻译 :    rear gap

• A diffusion mechanism whereby atomic motion is from interstitial site to interstitial site
  晶体扩散机制的一种。间隙原子由一个间隙位置迁移至邻近的间隙位置所构成的扩散。
• But above 700 , the resistivity decreases suddenly , as the nb ion diffuse from linbo3 into zno and occupied the interstitial sites . nb ions , as donor doping in zno film ,
  Linbo3中的nb扩散到zno中去,占据间隙位置,相当于失主能级,形成电阻率低的n型zno薄膜。
• The lattice constants were refined using celref program . when implanted c / fe ions ratio is 0 . 5 % , the p lattice is expanded , though c atom is much smaller han si . this is probably due to the solid solution in interstitial state
  单胞的间隙位置，形成间隙型固溶体，使晶格膨胀；当掺杂的碳离子含量增加到一定的程度时，趋向于形成置换固溶体，因为碳和硅属同族元素价态相同，所以碳会置换p 。
• The n type carrier was provided by interstitial zn atom , and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility . when zno thin film was annealed in the ar ambience , p conduction type was founded in the zno thin film which grew in oxygen enrichment condition . this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ) , and p type carrier was from oi
  在ar气保护下,对富氧条件下生长的zno薄膜的退火后的霍尔测量中发现, zno薄膜呈现p型导电状态,分析认为,这可能是由于富氧状态下生长的zno薄膜中过量的o在ar气保护下退火没有逸出薄膜,反而进入了zno薄膜的间隙位置,成为正电中心,使zno薄膜呈现p型导电。