Metal semiconductor field effect transistor mesfet 金属半导体场效应管
Investigation of the pinch off voltage of sic-mesfet 器件的夹断电压
Transient-state thermal model of gaas mesfet microwave pulsed power amplifier 脉冲微波功率器件瞬态热场模型
Multi-gate gaas mesfet switch 开关的结构设计
Influence of ab microdefects in lec semi-insulating gaas substrate on property of mesfet 对有机电致发光器件特性的影响
Numerical simulation of the influence of high power electromagnetic pulses on gaas mesfet 高功率电磁脉冲对砷化镓金属半导体场效应管的影响
Deep level defects is one of factors responses for the distribution of mesfet threshold voltage 我们认为这一现象与sigaas衬底深能级缺陷有关。
For the first time, an integrated hall switch based on gaas mesfet process was fabricated 论文首次采用gaas直接离子注入mesfet集成电路工艺,研制出了gaas霍尔开关集成电路。
A power circuit is designed for mesfet vco circuit with dc + 5v output and adjustable negative voltage output 该电路由十12v电源供电,提供正负两组电压输出,输出电压幅度可调。
2 . the nonlinear input-output characteristics of a gaas mesfet is modeled by the use of volterra series in the frequency domain 本文通过神经网络和volterra级数的等价性,用训练后的神经网络确定出volterra级数的核函数。