We analyzed the dependence of equivalent circuit parameters of mesfet switch on material and device structure . for modeling, we designed and fabricated six set of mesfet switches with different gate width, then measured their performance and extracted switch model parameters . mesfet switch database corresponding to the mmic product line is then established, and using the dependence of switch model parameters on gate peripheral we can attain the mesfet switch performance with any gate width through parameters scaling 移相器电路采用gaasmesfet开关作为控制元件，研究了mesfet开关等效电路参数与材料和器件结构参数的关系，设计制作了不同栅宽的六组mesfet开关，并进行参数测试和模型参数提取，建立了相应于mmic工艺线的mesfet开关模型库；根据开关模型参数随栅宽的变化规律，可以实现任意栅宽mesfet开关的参数定标工作。
We analyzed the dependence of equivalent circuit parameters of mesfet switch on material and device structure . for modeling, we designed and fabricated six set of mesfet switches with different gate width, then measured their performance and extracted switch model parameters . mesfet switch database corresponding to the mmic product line is then established, and using the dependence of switch model parameters on gate peripheral we can attain the mesfet switch performance with any gate width through parameters scaling 移相器电路采用gaasmesfet开关作为控制元件，研究了mesfet开关等效电路参数与材料和器件结构参数的关系，设计制作了不同栅宽的六组mesfet开关，并进行参数测试和模型参数提取，建立了相应于mmic工艺线的mesfet开关模型库；根据开关模型参数随栅宽的变化规律，可以实现任意栅宽mesfet开关的参数定标工作。
We analyzed the dependence of equivalent circuit parameters of mesfet switch on material and device structure . for modeling, we designed and fabricated six set of mesfet switches with different gate width, then measured their performance and extracted switch model parameters . mesfet switch database corresponding to the mmic product line is then established, and using the dependence of switch model parameters on gate peripheral we can attain the mesfet switch performance with any gate width through parameters scaling 移相器电路采用gaasmesfet开关作为控制元件，研究了mesfet开关等效电路参数与材料和器件结构参数的关系，设计制作了不同栅宽的六组mesfet开关，并进行参数测试和模型参数提取，建立了相应于mmic工艺线的mesfet开关模型库；根据开关模型参数随栅宽的变化规律，可以实现任意栅宽mesfet开关的参数定标工作。
We analyzed the dependence of equivalent circuit parameters of mesfet switch on material and device structure . for modeling, we designed and fabricated six set of mesfet switches with different gate width, then measured their performance and extracted switch model parameters . mesfet switch database corresponding to the mmic product line is then established, and using the dependence of switch model parameters on gate peripheral we can attain the mesfet switch performance with any gate width through parameters scaling 移相器电路采用gaasmesfet开关作为控制元件，研究了mesfet开关等效电路参数与材料和器件结构参数的关系，设计制作了不同栅宽的六组mesfet开关，并进行参数测试和模型参数提取，建立了相应于mmic工艺线的mesfet开关模型库；根据开关模型参数随栅宽的变化规律，可以实现任意栅宽mesfet开关的参数定标工作。
In this paper, gaas midf switch's design and fabrication programme are described in details . first of all, gaas mesfet's principle is analysed and a switch circuitry design methodology is supposed and, in the meanwhile, the transient parameters are discussed . based on above ones, a switch circuit topology is finished, which is designed and optimized by modern cad technology 首先，在深入了解mesfet的工作机理，分析讨论了gaasmesfet的工作原理并提出一种gaas中频开关电路的设计方法，进行了瞬态参数设计与分析。在这一系列研究工作基础上，进行开关电路的拓扑设计，借助现代计算机技术，对电路进行了计算机辅助设计和优化。
We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain-source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side-gate and mesfet, relation between sidegating effect and floating gate, and so on 本文还采用平面选择离子注入隔离工艺，开展了旁栅效应的光敏特性、迟滞现象、旁栅效应对mesfet阈值电压的影响、mesfet漏源电压对旁栅阈值电压的影响、漏源交换对旁栅阈值电压的影响、旁栅阈值电压与旁栅距的关系、旁栅效应与浮栅的关系等研究。
We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain-source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side-gate and mesfet, relation between sidegating effect and floating gate, and so on 本文还采用平面选择离子注入隔离工艺，开展了旁栅效应的光敏特性、迟滞现象、旁栅效应对mesfet阈值电压的影响、mesfet漏源电压对旁栅阈值电压的影响、漏源交换对旁栅阈值电压的影响、旁栅阈值电压与旁栅距的关系、旁栅效应与浮栅的关系等研究。
We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain-source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side-gate and mesfet, relation between sidegating effect and floating gate, and so on 本文还采用平面选择离子注入隔离工艺，开展了旁栅效应的光敏特性、迟滞现象、旁栅效应对mesfet阈值电压的影响、mesfet漏源电压对旁栅阈值电压的影响、漏源交换对旁栅阈值电压的影响、旁栅阈值电压与旁栅距的关系、旁栅效应与浮栅的关系等研究。
The experimental results showed that firstly, the distribution of resistiveity, mobility, carrier concentration, epd and ab-epd in gaas substrate was not uniform; secondly, the distribution of electrical parameters depended on that of epd and ab-epd; thirdly, mesfet devices performance correlated with ab microdefects; last, as shown by pl mapping results, it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices 实验结果表明，lecsi-gaas的电阻率、迁移率、载流子浓度、位错密度和ab微缺陷分布都不是均匀的，且电参数的分布与ab-epd、位错密度分布有关。制作的mesfet器件的性能参数分布与ab微缺陷有明显联系。从plmapping测量结果可以看出材料的衬底参数好，则pl谱的强度高，pl谱均匀性也好，器件参数也好，就有可能制作出良好的器件与电路。
The experimental results showed that firstly, the distribution of resistiveity, mobility, carrier concentration, epd and ab-epd in gaas substrate was not uniform; secondly, the distribution of electrical parameters depended on that of epd and ab-epd; thirdly, mesfet devices performance correlated with ab microdefects; last, as shown by pl mapping results, it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices 实验结果表明，lecsi-gaas的电阻率、迁移率、载流子浓度、位错密度和ab微缺陷分布都不是均匀的，且电参数的分布与ab-epd、位错密度分布有关。制作的mesfet器件的性能参数分布与ab微缺陷有明显联系。从plmapping测量结果可以看出材料的衬底参数好，则pl谱的强度高，pl谱均匀性也好，器件参数也好，就有可能制作出良好的器件与电路。
