Results show that threshold voltage uniformity of mesfet fabricated in planar selectively implanted process is better than that of in recessed-gate process 结果表明，采用平面工艺制备的gaasmesfet阈值电压均匀性比采用挖槽工艺制备的gaasmesfet阈值电压均匀性更好。
It simplifies the optimization of feedback components and accelerates the design of negative impedance oscillator . a 14ghz mesfet vco is designed and simulated with hp ads 根据该设计理论，用hpads进行了14ghzmesfetvco的设计与仿真，并对设计的电路进行了制作与测试。
Single pole double throw switch ( spdt ) mainly complete the conversion of the signal between difference channels, the control element in common use is pin diode and gaas mesfet 单刀双掷开关(spdt)主要用来完成信号在不同信道间的转换，其常用的控制器件有pin管和gaasmesfet两种。
At last, we tried to explain the reason of the above relationship . on the other hand, we proved the relationship between ab microdefects and mesfet devices performance via pl mapping method 同时，解释了产生上述关系的原因。另外，试验还利用plmapping技术从另一个角度检验了衬底质量和mesfet器件电性能的关系。
The influence of different process on gaas mesfet sidegating effect has been studied . these process include recessed-gate process, planar selectively implanted process and planar boron implanted process 本文对分别采用隔离注入挖槽、平面自隔离和平面离子注入隔离三种工艺制备的gaasmesfet旁栅效应进行了研究。
On the basis of theory analysis of phase shifter, we designed and fabricated the x-band 5-bit monolithic phase shifter circuit on the gaas mmic product line . the phase shifter circuit use gaas mesfet switches as control devices 在移相器原理分析的基础上，结合gaasmmic工艺线，设计并制备了x波段五位mmic移相器电路。
Namely, the electric field at the drain-side edge of the gate decreases with the increasing of negative charge density in the surface, so the breakdown voltage of gaas mesfet's will increase 表面受主态的增多使表面负电荷密度增大，表面聚集的负电荷可以分散漏侧栅边缘处的电力线密度，减弱了栅靠漏一侧的电场强度，击穿电压提高。
In addition, we fabricated mesfet devices on lec si-gaas substrate and studied the relationship between these parameters and mesfet devices performance such as gm, saturated drain current and threshold voltage 并以lecsi-gaas晶体为衬底制作注入型mesfet器件，研究了gaas衬底的ab微缺陷和mesfet器件电性能(包括跨导、饱和漏电流和阈值电压)的关系。
In addition, we fabricated mesfet devices on lec si-gaas substrate and studied the relationship between these parameters and mesfet devices performance such as gm, saturated drain current and threshold voltage 并以lecsi-gaas晶体为衬底制作注入型mesfet器件，研究了gaas衬底的ab微缺陷和mesfet器件电性能(包括跨导、饱和漏电流和阈值电压)的关系。
