In this paper , they are set forth at first that the kinds of computer - simulation of electronic devices , the development and the requirements of mosfet ' s model and the way of gain the models " parameters , , the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3 , they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on , so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency , intermediate frequency and high frequency have been built in chapter 4 and chapter 5 , although the equivalent circuit models in pspice are used for reference to bui id them , they have their own characteristics which are analyzed at a i i kinds of situations , so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6
After introduction of the tranlinear loop principal , the bjt current controlled conveyor has been designed by using mixed tranlinear loop voltage follower . as for modern integrated circuit , the model of mos transistor , the active resistance and the current mirror integrated circuit formed by mos transistor are introduced . the cmos current controlled conveyor has been derived from mixed tranlinear loop cmos voltage follower based on weak inversion operation
Vco ’ s theory and parameters especially for the basic mechanism of phase noise are studied . the parasitic effects of rf - ic passive devices such as inductors and varactors and the design guidelines for the on - chip spiral inductors are included too . the accumulation - mode varactor , which has a higher quality factor value than the inversion - mode mos varactor , is studied in detail
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